Compact silicon double and triple dots realized with only two gates

摘要

We report electronic transport on silicon double and triple dots created withthe optimized number of two gates. Using silicon nitride spacers two dots inseries are created below two top gates overlapping a silicon nanowire. Couplingbetween dots is controlled by gate voltages. A third dot is created either bycombined action of gate voltages or local doping depending on the spacerslength. The main characteristics of the triple dot stability diagram arequantitatively fitted.